This N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Type | Power MOSFET |
Number of Elements | 1 |
Polarity | N |
Channel Mode | Enhancement |
Drain-Source On-Res | 1.4Ohm |
Drain-Source On-Volt | 900V |
Gate-Source Voltage (Max) | ยฑ30V |
Continuous Drain Current | 9A |
Power Dissipation | 150W |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Mounting | Through Hole |
Pin Count | 3 +Tab |
Package Type | TO-3PN |
Packaging | Tape and Reel |
Package Include:
1xK2611
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